Chiral Perovskites Transform III-V Optoelectronics
June 19, 2024
A new class of chiral semiconductors has the potential to transform modern semiconductor technologies by introducing spin control through the chirality-induced spin selectivity (CISS) effect.
Scientific Achievement
We coupled a chiral perovskite layer with an off-the-shelf III-V light-emitting diode and demonstrated spin injection from the chiral-perovsksite into the III-V optoelectronic structure at room temperature and no magnetic field. The spin-injection efficiency is at least 50%.
Significance and Impact
Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enabling a broader range of opto-electronic functionality. Current efforts are limited due to inherent inefficiencies associated with spin injection across semiconductor interfaces. CHOISE has developed a novel class of chiral perovskites that can control spin currents through CISS. Controlling spins will impact a variety of energy technologies.
Research Details
- Fabricated clean c-HP/III-V interface
- Measured circularly polarized light with 15% efficiency
- Measured reduced circularly polarized light under applied magnetic field
Related People
All PIs listed in the publication
Matthew Beard
National Laboratory of the Rockies
Joseph Berry
University of Colorado
Jeffrey Blackburn
National Laboratory of the Rockies
Joseph Luther
National Laboratory of the Rockies
Zeev Valy Vardeny
University of Utah
